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PD-95878C
Radiation Hardended, Octal, Buffered and Non-Buffered, Solid State Relays
Product Summary
Part Number
RDHA701FP10A8CK RDHA701FP10A8QK
RDHA701FP10A8CK RDHA701FP10A8QK Octal, 100V, 1.5A
tr / tf
Fast
Voltage
100V 100V
Current
1.5A 1.5A
Buffer
None 5.0V
Controlled
64-PIN FLAT PACK
Description
The RDHA701FP10A8CK, RDHA701FP10A8QK are a family of radiation hardened, octal, single-pole, normally open, buffered and non-buffered solid state relays. These devices are actuated by an input voltage or current, depending on model, and have been characterized for 100 krad(Si) total dose. These parts are useful for applications requiring a compact, hermetic device.
Features:
n Total Dose Capability to 100krad(Si) n Optically Coupled n Buffered Input Stage
(RDHA701FP10A8QK)
n Input Current Actuated
(RDHA701FP10A8CK)
n 1000VDC Input to Output Isolation n Hermetically Sealed Package
Absolute Maximum Ratings per Channel @ Tj=25C (unless otherwise specified)
Parameter
Output Maximum Voltageg Output Current
Symbol
VS IO VIN IIN VDD IDD IDD pk PDISS TJ TS TL
Value
100 1.5 10 10 10 30 100 5.5 -55 to +125 -65 to +150 300
Units
V A V mA V mA W C
fg
Input Buffer Voltage - RDHA701FP10A8QK Input Buffer Current - RDHA701FP10A8QK Input Supply Voltage (Optocoupler) - RDHA701FP10A8QKi Input Supply Current - RDHA701FP10A8CK / RDHA701FP10A8QK Peak Input Supply Current (t 1.0ms) - RDHA701FP10A8CK Power Dissipation Operating Temperature Range Storage Temperature Range Lead Temperature
For notes, please refer to page 4
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1
03/29/06
RDHA701FP10A8CK, RDHA701FP10A8QK
RDHA701FP10A8CK
General Characteristics per Channel @ -55CdTCd+125C (Unless Otherwise Specified)
Parameter
Input Supply Currentc 1 Input Voltage Drop Input-to-Output Leakage Current Output Capacitancec Thermal Resistancec MTBF (Per Channel) 2 3 1 VI-O = 1.0KVdc, dwell = 5.0s VIN = 0.8V, f = 1.0MHz, VS = 25V TC = 25C IDD = 10mAc MIL-HDBK-217F, SF@Tc= 25C II-O COSS RTHJC IIN = 10mA VL
Group A
Subgroups
Test Conditions
IO = 1.0A
Symbol Min. Typ. Max. Units
IDD -1.2 1.4 1.0 ---48 10 ----145 --25 1.6 2.2 1.4 1.0 -18 -A pF C/W MHrs V mA
RDHA701FP10A8QK
General Characteristics per Channel @ -55CdTCd+125C (Unless Otherwise Specified)
Parameter
Input Buffer Threshold Voltagec,e Input Supply Currentc Input-to-Output Leakage Current Output Capacitancec Thermal Resistancec MTBF (Per Channel) 1 VDD = 5.0V, IO = 1.0A VDD = 10V, IO = 1.0Ai VI-O = 1.0KVdc, dwell = 5.0s VIN = 0.8V, f = 1.0MHz, VS = 25V TC = 25C VIN = 5.0V, VDD = 5.0Vc,f MIL-HDBK-217F, SF@Tc= 25C
Group A
Subgroups
Test Conditions
Symbol Min. Typ. Max. Units
VIN(TH) IDD II-O COSS RTHJC 4.5 -----24.6 -10 --145 ---15 25 1.0 -18 -V mA A pF C/W MHrs
For notes, please refer to page 5
2
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RDHA701FP10A8CK, RDHA701FP10A8QK
Pre-Irradiation RDHA701FP10A8CK
Electrical Characteristics per Channel @ -55CdTCd+125C (Unless Otherwise Specified)
Parameter Group A
Subgroups Output On-Resistance Output Leakage Current Turn-On Delayh Turn-Off Delayh Rise Timed,h Fall Timed,h 1 2 1 2 1,2,3 1,2,3 1,2,3 1,2,3 IDD = 10mA, IO = 1.0A V IN = 0.8V, VS = 100V V IN = 0.8V, VS = 80V IDD = 10mA, VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms V S = 28V, D = 2.0% RC = 41/100F, PW = 50ms IDD = 10mA, VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms V S = 28V, D = 2.0% RC = 41/100F, PW = 50ms RDS(ON) IO ton toff tr tf --------0.24 0.45 --0.6 3.5 0.5 7.2 0.35 0.75 10 25 2.5 7.0 ms 2.0 9.5 A
Test Conditions
Symbol Min. Typ. Max. Units
Pre-Irradiation RDHA701FP10A8QK
Electrical Characteristics per Channel @ -55CdTCd+125C (Unless Otherwise Specified)
Parameter Group A
Subgroups Output On-Resistance Output Leakage Current Input Buffer Current Turn-On Delayh Turn-Off Delayh Rise Timed,h Fall Timed,h 1 2 1 2 1 2,3 1,2,3 1,2,3 1,2,3 1,2,3 IDD = 10mA, IO= 1.0A VIN = 0.8V, VS = 100V VIN = 0.8V, VS = 80V VIN = 5.0V IDD = 10mA, VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms IDD = 10mA, V+ = 28V, D = 2.0% RC = 41/100F, PW = 50ms VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms RDS(ON) IO IIN ton toff tr tf ----------0.24 0.45 ----4.5 35 1.1 11 0.35 0.75 10 25 1.0 3.0 15 60 ms 3.0 15 A A
Test Conditions
Symbol Min. Typ. Max. Units
For notes, please refer to page 5
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3
RDHA701FP10A8CK, RDHA701FP10A8QK
Post Total Dose Irradiation ,,
RDHA701FP10A8CK
Electrical Characteristics per Channel @ 25C (Unless Otherwise Specified)
Parameter
Output On-Resistance Output Leakage Current Turn-On Delayh Turn-Off Delayh Rise Timed,h Fall Timed,h
Group A
Subgroups 1 1 1 1 1 1
Test Conditions
IDD = 10mA, IO= 1.0A VIN = 0.8V, VS = 100V IDD = 10mA, VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms IDD = 10mA, VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms
Symbol Min. Typ. Max. Units
RDS(ON) IO ton toff tr tf ------0.24 -0.6 3.5 0.5 7.2 0.35 10 2.5 7.0 ms 2.0 9.5 A
Post Total Dose Irradiation ,,
RDHA701FP10A8QK
Electrical Characteristics per Channel @ 25C (Unless Otherwise Specified)
Parameter
Output On-Resistance Output Leakage Current Input Buffer Current Turn-On Delayh Turn-Off Delayh Rise Timed,h Fall Timed,h
Group A
Subgroups 1 1 1 1 1 1 1
Test Conditions
IDD = 10mA, IO= 1.0A VIN = 0.8V, VS = 100V VIN = 5.0V IDD = 10mA, VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms IDD = 10mA, VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms VS = 28V, D = 2.0% RC = 41/100F, PW = 50ms
Symbol Min. Typ. Max. Units
RDS(ON) IO IIN ton toff tr tf -------0.24 --4.5 35 1.1 11 0.35 10 1.0 15 60 ms 3.0 15 A
For notes, please refer to page 5
4
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RDHA701FP10A8CK, RDHA701FP10A8QK
Notes for Maximum Ratings, General and Electrical Characteristic Tables
m Specification is guaranteed by design Rise and fall times are controlled internally Inputs protected for VIN< 1.0V and VIN > 7.5V Optically coupled Solid State Relays (SSRs) have relatively slow turn on and turn off times. Care must be taken to insure that transient currents do not cause a violation of SOA. If transient conditions are present, IR recommends a complete simulation to be performed by the end user to ensure compliance with SOA requirements as specified in the IRHQ57110 data sheet While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for product derating, as applicable for the application Reference Figures 2, 3 & 4 for Switching Test Circuits and Wave Form Input Supply voltage for RDHA701FP10A8QK shall not exceed 5.25V@Tc 70C Total Dose Irradiation with Input Bias. 10mA IDD applied and VDS = 0 during Irradiation Total Dose Irradiation with Output Bias. 80 Volts VDS applied and IDD = 0 during Irradiation International Rectifier does not currently have a DSCC certified Radiation Hardness Assurance Program
n o
1.60
1.40
1.20
ID, Drain Current (A)
1.00
0.80
0.60
0.40
0.20
0.00 25 50 75 100 125 150
TC, Case Temperature (C)
Fig 1: Maximum Drain Current Vs Case Temperature
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5
RDHA701FP10A8CK, RDHA701FP10A8QK
Schematic
Notes
1. Buffered Input stages on RDHA701FP10A8QK only 2. Input Current Actuation (*) on RDHA701FP10A8CK only
6
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RDHA701FP10A8CK, RDHA701FP10A8QK
100 F uF
Fig 2: Switching Test Circuit for RDHA701FP10A8CK only
100 FuF
Fig 3: Switching Test Circuit for RDHA701FP10A8QK only
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7
RDHA701FP10A8CK, RDHA701FP10A8QK
Fig 4: Switching Test Waveform
Radiation Performance International Rectifier Radiation Hardened SSRs are tested to verify their hardness capability. The hardness assurance program at IR uses a Cobalt-60 (60Co) source and heavy ion irradiation. Both pre- and postirradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparison.
8
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RDHA701FP10A8CK, RDHA701FP10A8QK
Pin Designation - RDHA701FP10A8CK
Pin No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Designation
Current IN 1 N/C N/C Current OUT 1 Current IN 2 N/C N/C Current OUT 2 Current IN 3 N/C N/C Current OUT 3 Current IN 4 N/C N/C Current OUT 4
Pin No.
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Designation
Current IN 5 N/C N/C Current OUT 5 Current IN 6 N/C N/C Current OUT 6 Current IN 7 N/C N/C Current OUT 7 Current IN 8 N/C Case groundc Current OUT 8
Pin No.
33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
Designation
Drain 8 Drain 8 Source 8 Source 8 Drain 7 Drain 7 Source 7 Source 7 Drain 6 Drain 6 Source 6 Source 6 Drain 5 Drain 5 Source 5 Source 5
Pin No. Designation
49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 Drain 4 Drain 4 Source 4 Source 4 Drain 3 Drain 3 Source 3 Source 3 Drain 2 Drain 2 Source 2 Source 2 Drain 1 Drain 1 Source 1 Source 1
Pin Designation - RDHA701FP10A8QK
Pin No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Designation
+5V 1 IN 1 N/C 5V RTN 1 +5V 2 IN 2 N/C 5V RTN 2 + 5V 3 IN 3 N/C 5V RTN 3 + 5V 4 IN 4 N/C 5V RTN 4
Pin No.
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Designation
+ 5V 5 IN 5 N/C 5V RTN 5 + 5V 6 IN 6 N/C 5V RTN 6 + 5V 7 IN 7 N/C 5V RTN 7 + 5V 8 IN 8 Case groundc 5V RTN 8
Pin No.
33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48
Designation
Drain 8 Drain 8 Source 8 Source 8 Drain 7 Drain 7 Source 7 Source 7 Drain 6 Drain 6 Source 6 Source 6 Drain 5 Drain 5 Source 5 Source 5
Pin No. Designation
49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 Drain 4 Drain 4 Source 4 Source 4 Drain 3 Drain 3 Source 3 Source 3 Drain 2 Drain 2 Source 2 Source 2 Drain 1 Drain 1 Source 1 Source 1
cACase ground is for EMI shielding purposes only. It does not have to be connected for proper relay operation
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9
RDHA701FP10A8CK, RDHA701FP10A8QK
Case Outline and Dimensions -- 64-Pin Flat Pak Package
Notes
1. 2. 3. 4. Dimensioning and Tolerancing per ASME Y14.5SM-1994 Controlling Dimension: Inch Dimensions are shown in inches Tolerances are +/- 0.005 UOS
Part Numbering Nomenclature RD H A 7 01 FP
Device Type
RD = DC Solid State Relay
10
A
8
C/Q
K
Screening Level
K = Class K per MIL-PRF-38534
Radiation Characterization
H = RAD Hard
Features
C = Non Buffered Compromise Q = 5.0 Volt Buffered Controlled
Generation
A = Current Design
Radiation Level
7 = 100K Rad (Si)
Poles
8 = 8 Poles
Current
01 = 1.0A
Throw Configuration
A = Single Throw, Normally Open
Package
FP = 64-Pin Flat Pack
Volts
10 = 100 Volts
10
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/2006
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